Intel details 13 chip inventions at technology symposium

Intel shared the details of 13 papers with chip manufacturing innovations for the upcoming VLSI Symposium chip design conference.

Work was carried out by the Intel Technology Development, Intel Labs, and Intel Design Engineering teams.

Intel CEO Ben Sell talked about four of the revelations to the press this week, and Intel will reveal more of a circuit innovation that uses Compute Near Memory (CNM) techniques to improve memory eight-core RISC-V processor.

The IEEE 2022 Symposium on VLSI Technology and Circuits will take place from June 13 to June 17 in Honolulu, Hawaii. Researchers from Intel are presenting 13 papers, including the results of a new advanced CMOS FinFET technology, Intel 4, demonstrating more than 20% performance increase at power level compared to Intel 7.

Intel’s executive vice president, Raja Koduri, will be participating in a Circuits panel session titled “Building the 2030 Workforce: How to Attract Good Students and Teach Them?”

Specifically, Intel is announcing the results of its new advanced complementary metal-oxide-semiconductor fin-field-effect transistor (CMOS) technology, Intel 4, demonstrating a more than 20% increase in transistor performance at iso-power vs Intel 7 process. .

The Intel 4 process allows for twice the footprint of the high-performance logic library and extensive use of ultraviolet (EUV) to simplify the process while also reducing design effort compared to Intel 7. Things This and other key technology advancements presented will drive a new generation of Intel products as Intel is working on the roadmap laid out last July to introduce 5 process nodes in 4 years.

Intel is also announcing new methods and enhancements to the platform circuits that will serve as key components of future solutions. One such circuit innovation uses Compute Near Memory (CNM) techniques to improve the performance of eight-core RISC-V processors and will be showcased in a spotlight demo at the symposium. . These and future enhancements developed at Intel will not only support Intel’s product portfolio, but are also intended to benefit customers of Intel’s new foundry business, Intel Foundry Services (IFS). ).

Intel will also demonstrate MOCVD of 2D materials directly on 300 mm Si substrates, including p-type WSe2, for the first time, for the BEOL and FEOL application spaces. MoS2 nFET shows an increased change with geometrical scaling.

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